N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3510 uses advanced trench technology...
Description
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3510 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 15.6mΩ @ VGS=4.5V RDS(ON) < 10.2mΩ @ VGS=10V
High Power and current handling capability Lead free product is available Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage Drain Current @ Continuous Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation
Drain Current @ Continuous
Maximum Power Dissipation Maximum Operating Junction Temperature Storage Temperature Range
...
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