BFG10X

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating areas Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter Marking code: T5. 1 BFG10W/X fpage 4 3 2 MBK523 Top view Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms f (GHz) 1.9 0.9 0.9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 102 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − MIN. MAX. 20 10 2.5 250 250 400 +150 175 V V V mA mA mW °C °C UNIT VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB) ≥5 ≥10 ≥12.5 ηc (%) ≥50 ≥50 ≥50 THERMA...