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BFC60

Seme LAB

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS

LAB TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) SEME BFC60 2 16.51 (0.650) 14.22 (...



BFC60

Seme LAB


Octopart Stock #: O-126405

Findchips Stock #: 126405-F

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LAB TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) SEME BFC60 2 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. 4.83 (0.190) 3.56 (0.140) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS VDSS ID(cont) RDS(on) 1500V 0.1A 140Ω 1 2 3 14.73 (0.580) 12.70 (0.500) 6.35 (0.250) 4.60 (0.181) 1.78 (0.070) 0.99 (0.390) 2.54 (0.100) N o m. 5.08 (0.200) N o m. 1.02 (0.040) 0.38 (0.015) 0.66 (0.026) 0.41 (0.016) 2.92 (0.115) 2.03 (0.080) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation Operating and Storage Junction Temperature Range 1500 0.1 0.2 ±20 20 –55 to +150 V A A V W °C ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated) BVDSS RDS(ON) IDSS IGSS VGS(off) Ciss Coss Crss ton toff VSD |YFS| Characteristic Drain – Source Breakdown Voltage Drain – Source On State Resistance Zero Gate Voltage Drain Current Gate – Source Leakage Current Cutoff Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Diode Forward Voltage Forward Transfer Admittance Test Conditions VGS = 0V , ID = 1mA VGS =10V , ID = 50mA VDS = 1200V , VGS = 0V VGS = ±20V , VDS = 0V VDS = 10V , ID...




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