Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
High voltage:VCEO=120V High transition f...
Production specification
NPN Silicon Epitaxial Planar
Transistor
FEATURES
High voltage:VCEO=120V High transition frequency;fT=120MHz. PC=500mW. Complements the 2SA1201.
Pb
Lead-free
2SC2881
APPLICATIONS
Power and voltage amplifier application.
ORDERING INFORMATION
Type No.
Marking
2SC2881
CO1/CY1
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC IB PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current Collector Dissipation Junction and Storage Temperature
120 120 5 0.8 0.16 500 -55 to +150
Units V V V A A mW ℃
E026 Rev.A
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Production specification
NPN Silicon Epitaxial Planar
Transistor
2SC2881
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0
120
V
Collector-em...