2SC1766

Production specification NPN Epitaxial Transistor FEATURES  Small flat package.  Low saturation voltage VCE(sat)=-0.5V  High speed switching time  PC=1.0 to 2.0W  High saturation current capability Pb Lead-free 2SC1766 APPLICATIONS  Power amplifier ORDERING INFORMATION Type No. Marking 2SC1766 P1766/Q1766/Y1766 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 2 ICM Peak Collector Current 2 IBM Peak Base Current 0.4 PD Total Power Dissipation 1000 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A A mW ℃ E049 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Transistor 2SC1766 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector cut-off current Emitt...