DatasheetsPDF.com

BF994S

Siemens Semiconductor Group

Silicon N Channel MOSFET Tetrode

Silicon N Channel MOSFET Tetrode q BF 994 S For VHF applications, especially for input and mixer stages with a wide tu...


Siemens Semiconductor Group

BF994S

File Download Download BF994S Datasheet


Description
Silicon N Channel MOSFET Tetrode q BF 994 S For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type BF 994 S Marking MG Ordering Code (tape and reel) Q62702-F1020 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature< Thermal Resistance Junction - soldering point Rth Js < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. BF 994 S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± ± ± Values typ. max. Unit 20 8.5 8.5 – – 2 – – – – – – – – – – – 14 14 50 50 20 2.5 2.0 V V(BR) G1SS V(BR) G2SS IG1SS IG2SS nA IDSS – VG1S (p) – VG2S (p) mA V BF 994 S Electrical Character...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)