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BF988 Dataheets PDF



Part Number BF988
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet BF988 DatasheetBF988 Datasheet (PDF)

BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Sou.

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BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85007 Rev. 4, 08-Jul-99 www.vishay.de • FaxBack +1-408-970-5600 1 (8) BF988 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF988 BF988A BF988B IDSS IDSS IDSS –VG1S(OFF) –VG2S(OFF) 4 4 9.5 Min 12 7 7 Typ Max Unit V V V nA nA mA mA mA V V 14 14 50 50 18 10.5 18 2.5 2.0 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Electrical AC Characteristics VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain Test Conditions Type Symbol y21s Cissg1 Cissg2 Crss Coss Gps Gps Min 21 Typ 24 2.1 1.2 25 1.05 28 20 Max 2.5 Unit mS pF pF fF pF dB dB dB 1 1.5 dB dB VG1S = 0, VG2S = 4 V AGC range Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG2S = 4 to –2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz 16.5 40 DGps F F www.vishay.de • FaxBack +1-408-970-5600 2 (8) Document Number 85007 Rev. 4, 08-Jul-99 BF988 Vishay Telefunken Common Source S–Parameters VDS , = 8 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG MAG dB –0.02 –0.10 –0.31 –0.56 –0.87 –1.26 –1.59 –2.04 –2.42 –2.88 –3.39 –3.94 –4.46 –0.02 –0.11 –0.35 –0.62 –0.97 –1.39 –1.76.


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