BF987

Silicon N Channel MOSFET Triode q q BF 987 For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability Type BF 987 Marking – Ordering Code Q62702-F35 Pin Configuration 1 2 3 D S G Package1) TO-92 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 45 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - ambient Rth JA ≤ Symbol VDS ID ± Values 20 30 10 300 150 Unit V mA mW IGSM Ptot Tstg Tch – 55 … + 150 ˚C 350 K/W 1) For detailed information see chapter Package Outlines. BF 987 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 Gate-source leakage current ± VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC Characteristics Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Power gain (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS Noise figure (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS gfs Cgss Cdg Cdss Gp 14 – – – – 16 2.7 35 1 25 – – – – – mS pF fF pF dB V(BR) DS ± ± Valu...