BF966S

BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85004 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (8) BF966S Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = ...