Document
BF964S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647
D High AGC-range D Low feedback capacitance D Low input capacitance
G2 G1 D
1
BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
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S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Document Number 85003 Rev. 3, 20-Jan-99
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BF964S
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF964S BF964SA BF964SB Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS –VG1S(OFF) –VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V
14 14 50 50 18 10.5 18 2.5 2.0
Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps DGps F Min 15 Typ 18.5 2.5 1.2 25 1.0 25 1.0 Max 3.0 35 1.3 Unit mS pF pF fF pF dB dB dB
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to –2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz
50
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Document Number 85003 Rev. 3, 20-Jan-99
BF964S
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) 250 ID – Drain Current ( mA ) 200 150 100 50 0 0
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80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
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VDS= 15V
VG1S= 4V 3V 2V
1V
0V –1V –1 0 1 2 3 4 5
Tamb – Ambient Temperature ( °C )
VG2S – Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
36 32 ID – Drain Current ( mA ) 28 24 20 16 12 8 4 0 0
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Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
1.5V 1V
C issg1 – Gate 1 Input Capacitance ( pF )
VG1S= 2V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
VG2S= 4V 0.5V
VDS=15V VG2S=4V f=1MHz
0V –0.5V –1V 2 4 6 8 10 12 14 16
3
6
9
12 15 18 21 24 27 30
VDS – Drain Source Voltage ( V )
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ID – Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
100
Figure 5. Gate 1 Input Capacitance vs. Drain Current
2.00 C oss – Output Capacitance ( pF )
90 ID – Drain Current ( mA ) 80 70 60 50 40 30 20 10 0 –1
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VDS= 15V
VG2S= 6V 5V 4V 3V 2V 1V 0V –1V
1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0
VG2S=4V ID=10mA f=1MHz
0
1
2
3
4
5
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2
4
6
8
10 12 14 16 18 20
VG1S – Gate 1 Source Voltage ( V )
VDS – Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
Document Number 85003 Rev. 3, 20-Jan-99
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BF964S
Vishay Telefunken
4.0 C issg2 – Gate 2 Input Capacitance ( pF ) 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 –3
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20 VDS=15V VG1S=0 f=1MHz Im ( y 11 ) ( mS ) 18 16 14 12 10 8 6 4 2 0 –2 –1 0 1 2 3 4 5 6
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f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz ID=20mA
100MHz 0 2 4 6 8 10 12 14 16 18 20
VG2S – Gate 2 Source Voltage ( V )
Re (y11) ( mS )
Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
10 – Transducer Gain ( dB ) 0 –10 –20 –30 –40 –50 –60 –70 –5
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Figure 10. Short Circuit Input Admittance
0.3 f=1300MHz 0.2 ID=5mA Im ( y 12 ) ( mS ) 0.1 10mA 20mA 1000MHz 0.0 700MHz VDS=15V VG2S=4V f=100...1300MHz 0.3 0.4 0.5
f= 200MHz
4V 3V 2V 1V 0V –0.5V –1V
S 21
2
VG2S=–2...–3V –4 –3 –2 –1 0 1 2 3
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–0.1 0 0.1 0.2 Re (y12) ( mS )
VG1S – Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
24 22 20 18 16 14 12 10 8 6.