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BF964S Dataheets PDF



Part Number BF964S
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet BF964S DatasheetBF964S Datasheet (PDF)

BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate.

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BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85003 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (8) BF964S Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF964S BF964SA BF964SB Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS –VG1S(OFF) –VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V 14 14 50 50 18 10.5 18 2.5 2.0 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA Electrical AC Characteristics VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps DGps F Min 15 Typ 18.5 2.5 1.2 25 1.0 25 1.0 Max 3.0 35 1.3 Unit mS pF pF fF pF dB dB dB VG1S = 0, VG2S = 4 V GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to –2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz 50 www.vishay.de • FaxBack +1-408-970-5600 2 (8) Document Number 85003 Rev. 3, 20-Jan-99 BF964S Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) 250 ID – Drain Current ( mA ) 200 150 100 50 0 0 96 12159 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 12764 VDS= 15V VG1S= 4V 3V 2V 1V 0V –1V –1 0 1 2 3 4 5 Tamb – Ambient Temperature ( °C ) VG2S – Gate 2 Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 36 32 ID – Drain Current ( mA ) 28 24 20 16 12 8 4 0 0 12762 Figure 4. Drain Current vs. Gate 2 Source Voltage 4.0 1.5V 1V C issg1 – Gate 1 Input Capacitance ( pF ) VG1S= 2V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 VG2S= 4V 0.5V VDS=15V VG2S=4V f=1MHz 0V –0.5V –1V 2 4 6 8 10 12 14 16 3 6 9 12 15 18 21 24 27 30 VDS – Drain Source Voltage ( V ) 12765 ID – Drain Current ( mA ) Figure 2. Drain Current vs. Drain Source Voltage 100 Figure 5. Gate 1 Input Capacitance vs. Drain Current 2.00 C oss – Output Capacitance ( pF ) 90 ID – Drain Current ( mA ) 80 70 60 50 40 30 20 10 0 –1 12763 VDS= 15V VG2S= 6V 5V 4V 3V 2V 1V 0V –1V 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 VG2S=4V ID=10mA f=1MHz 0 1 2 3 4 5 12766 2 4 6 8 10 12 14 16 18 20 VG1S – Gate 1 Source Voltage ( V ) VDS – Drain Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage Figure 6. Output Capacitance vs. Drain Source Voltage Document Number 85003 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (8) BF964S Vishay Telefunken 4.0 C issg2 – Gate 2 Input Capacitance ( pF ) 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 –3 12767 20 VDS=15V VG1S=0 f=1MHz Im ( y 11 ) ( mS ) 18 16 14 12 10 8 6 4 2 0 –2 –1 0 1 2 3 4 5 6 12770 f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz ID=20mA 100MHz 0 2 4 6 8 10 12 14 16 18 20 VG2S – Gate 2 Source Voltage ( V ) Re (y11) ( mS ) Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage 10 – Transducer Gain ( dB ) 0 –10 –20 –30 –40 –50 –60 –70 –5 12768 Figure 10. Short Circuit Input Admittance 0.3 f=1300MHz 0.2 ID=5mA Im ( y 12 ) ( mS ) 0.1 10mA 20mA 1000MHz 0.0 700MHz VDS=15V VG2S=4V f=100...1300MHz 0.3 0.4 0.5 f= 200MHz 4V 3V 2V 1V 0V –0.5V –1V S 21 2 VG2S=–2...–3V –4 –3 –2 –1 0 1 2 3 12772 –0.1 0 0.1 0.2 Re (y12) ( mS ) VG1S – Gate 1 Source Voltage ( V ) Figure 8. Transducer Gain vs. Gate 1 Source Voltage 24 22 20 18 16 14 12 10 8 6.


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