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2SA1797

GME

PNP Transistor


Description
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).  Excellent DC current gain characteristics.  Complements the 2SA1797 and 2SC4672.  MSL 3 APPLICATIONS  Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1797 AGP/AGQ 2SA1797 SOT...



GME

2SA1797

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