PNP Epitaxial Planar Silicon Transistor
FEATURES
High breakdown voltage. Adoption of MBIT process. Excellent hFE ...
PNP Epitaxial Planar Silicon
Transistor
FEATURES
High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity.
Pb
Lead-free
APPLICATIONS
High-Voltage Driver Applications
Production specification
2SA1740
ORDERING INFORMATION
Type No.
Marking
2SA1740
AK
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector Current(Pulse)
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0.8t)
Value
Units
-400
V
-400
V
-5 V
-200
mA
-400
mA
0.5 W 1.3 Note1 W
-55 to +150 ℃
E042 Rev.A
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PNP Epitaxial Planar Silicon
Transistor
Production specification
2SA1740
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown vo...