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BF908WR

NXP
Part Number BF908WR
Manufacturer NXP
Description N-channel dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Se...
Datasheet PDF File BF908WR PDF File

BF908WR
BF908WR

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package.
The transistor is protected ...


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