BF904

DISCRETE SEMICONDUCTORS DATA SHEET BF904; BF904R N-channel dual gate MOS-FETs Product specification Supersedes data of 1997 Sep 05 1999 May 17 Philips Semiconductors Product specification N-channel dual gate MOS-FETs FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION handbook, halfpage d 3 d handbook, halfpage 4 3 4 g2 g1 1 Top view g2 g1 2 s,b Top view 2 MAM124 1 MAM125 - 1 s,b BF904 marking code: M04. BF904R marking code: M06. Fig.1 Simplified outline (SOT143B) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERE...