Document
SUP90N08-7m7P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
75 0.0077 at VGS = 10 V
ID (A) 90d
Qg (Typ.) 69
TO-220AB
FEATURES • TrenchFET® Power MOSFETS • 100 % Rg and UIS Tested
APPLICATIONS • Synchronous Rectification
RoHS
COMPLIANT
D
DRAIN connected to TAB
GD S Top View Ordering Information: SUP90N08-7m7P-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 75 ± 20 90d 90d 180 50 125
208.3b 3.75
- 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Note.