BF824W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824W FEATURES Low current (max. 25 mA) Low voltage (max. 30 V). APPLICATIONS RF stages in FM front-ends in common base configuration. DESCRIPTION PNP medium frequency transistor in a SOT323 plastic package. MARKING TYPE NUMBER BF824W MARKING CODE(1) F8∗ Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 1 Top view 2 MAM048 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − −65 − −65 MAX. −30 −30 −4 −25 −25 200 +150 150 +150 UNIT V V V mA mA mW °C °C °C 1999 Apr 15 2 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient ...