BF824

DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824 FEATURES Low current (max. 25 mA) Low voltage (max. 30 V). APPLICATIONS RF stages in FM front-ends in common base configuration. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF824 MARKING CODE(1) F8∗ Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF824 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 16 2 NXP Semiconductors PNP medium frequency transistor Product data sheet BF824 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − −65 − −65 MAX. −30 −30 −4 −25 −25 250 +150 150 +150 UNIT V V ...