BF823

DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors PNP high-voltage transistors Product data sheet BF821; BF823 FEATURES Low current (max. 50 mA) High voltage (max. 300 V). APPLICATIONS Telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. handbook, halfpage 3 3 MARKING TYPE NUMBER BF821 BF823 MARKING CODE(1) 1W* 1Y* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 1 Top view 1 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPENUMBER BF821 BF823 NAME − − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads VERSION SOT23 SOT23 2004 Jan 16 2 NXP Semiconductors PNP high-voltage transistors P...