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BF799

Infineon Technologies AG

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz • SAW filter driver in TV tuners • ...


Infineon Technologies AG

BF799

File Download Download BF799 Datasheet


Description
NPN Silicon RF Transistor For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners Pb-free (RoHS compliant) package BF799 32 1 Type BF799 Marking LKs 1=B Pin Configuration 2=E 3=C Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, Peak base current Total power dissipation TS ≤ 69 °C 1) Junction temperature Storage temperature Symbol VCEO VCES VCBO VEBO IC ICM IBM Ptot Tj Tstg Value 20 30 30 3 35 50 15 280 150 -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS ≤ 290 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C K/W 1 2011-09-21 BF799 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Base-emitter breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA V(BR)CEO 20 - -V V(BR)CBO 30 V(BR)EBO 3 - - ICBO - - 100 nA hFE VCEsat - 35 95 - 40 100 250...




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