BF721T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF721T1/D PNP Silicon Transistor COLLECTOR 2,4 BASE 1 EMITTER 3 BF721T1 Motorola Preferred Device PNP SILICON TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value – 300 –300 – 300 – 5.0 –100 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts °C °C 1 2 3 4 CASE 318E-04, STYLE 1 SOT–223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 2.7 kΩ) Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector-Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = – 250 Vdc, RBE = 2.7 kΩ) (VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER — — –50 –10 nAdc µAdc – 300 –300 –300 – 5.0 — — — — — –10 Vdc Vdc Vdc Vdc nAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounti...