BF660

PNP Silicon RF Transistor q BF 660 For VHF oscillator applications Type BF 660 Marking LEs Ordering Code (tape and reel) Q62702-F982 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Emitter current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IE Ptot Tj Tstg Values 30 40 4 25 30 280 150 – 65 … + 150 Unit V mA mW ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 660 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz fT Ccb Cce – – – 700 0.6 0.28 – – – MHz pF V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 30 40 4 – 30 – – – – – – – – 50 – nA – V Values typ. max. Unit Semiconductor Group 2 BF 660 Total power dissipation Ptot = f (TA) Transition freque...