BF579/BF579R
Vishay Telefunken
Silicon PNP Planar RF Transistor
Electrostatic sensitive device. Observe precautions for...
BF579/BF579R
Vishay Telefunken
Silicon
PNP Planar RF
Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and low cross modulation.
Features
D High transition frequency D Low distortion
1 1
13 581 94 9280 9510527
13 581
2
3
3
2
BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 20 20 3 25 200 150 –55 to +150 Unit V V V mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Document Number 85001 Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (5)
BF579/BF579R
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 20 V, VBE = 0 –VCB = 15 V, IE = 0 –VEB = 3 V, IC = 0 –IC = 1 mA, ...