BLC2425M8LS300P

BLC2425M8LS300P Power LDMOS transistor Rev. 3 — 17 June 2016 Poduct data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M8LS300P is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C in a class-AB application circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) CW 2450 32 300 17.0 58.0 CW pulsed [1] 2450 32 300 17.5 61.0 [1] tp = 100 s;  = 10 % 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1....