BLP27M810

BLP27M810 Power LDMOS transistor Rev. 1 — 11 February 2016 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) CW 2450 100 32 10 18.4 50.6 Pulsed CW 2700 110 28 2 17 19 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (HF to 2700 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Broadca...