BF543

BF543 Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz 3 preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 ... 150 -55 ... 150 150 Unit V mA mW °C Gate-source peak current Total power dissipation, TS  76 °C Storage temperature Ambient temperature range Channel temperature
IGSM Ptot Tstg TA Tch Thermal Resistance Channel - soldering point1) Rthchs
370 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-28-2001 BF543 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V Gate-source breakdown voltage

IGS = 10 mA, VDS = 0

V(BR)GSS
IGSS Symbol min. V(BR)DS 20 7 2 - Values typ. 4 0.7 max. 12 50 6 1.5 Unit V Gate-source leakage current

VGS = 6 V, VDS = 0 nA mA V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC characteristics Forward tranconductance VDS = 10 V, I D = 4 mA Gate input capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 4 mA, f = 1 MHz Power gain (test circuit) GG = 2mS, GL = 0,5 mS V...