BF 517
NPN Silicon RF Transistor
For amplifier and oscillator
3
applications in TV-tuners
2 1
VPS05161
Type BF 517...
BF 517
NPN Silicon RF
Transistor
For amplifier and oscillator
3
applications in TV-tuners
2 1
VPS05161
Type BF 517
Maximum Ratings Parameter
Marking LRs 1=B
Pin Configuration 2=E
Symbol VCEO VCBO VEBO IC ICM Ptot Tj TA Tstg
Package SOT-23
Value 15 20 2.5 25 50 280 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
3=C
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f 10 MHz Total power dissipation, TS 55 °C F) Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point RthJS
340
K/W
1T is measured on the collector lead at the soldering point to the pcb S
1
Oct-26-1999
BF 517
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat 0.1 0.5 hFE 25 250 ICBO 50 V(BR)CEO 15 typ. max.
Unit
V nA V
AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 75 F 2.5 dB Cobs 0.8 Cibo 1.45 Cce 0.25 0.4 Ccb 0.3 0.55 0.75 pF fT 1 ...
