BLP9G0722-20; BLP9G0722-20G
Power LDMOS transistor
Rev. 3 — 26 February 2018
Product data sheet
1. Product profile
1....
BLP9G0722-20; BLP9G0722-20G
Power LDMOS
transistor
Rev. 3 — 26 February 2018
Product data sheet
1. Product profile
1.1 General description
20 W plastic LDMOS power
transistor for base station applications at frequencies from 100 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (dBm) (dB) (%) (dBc)
1-carrier W-CDMA
400 to 430
180 28 35
25.5 24 45 [1]
728 to 768
180 28 35
23 22 45 [1]
1805 to 1880
180 28 35
19 21 45 [1]
2110 to 2170
180 28 35
18 21 45 [1]
2300 to 2400
180 28 35
17.3 21 45 [1]
2570 to 2620
180 28 35
16 20 45 [1]
[1] Test signal: 3GPP test model 1; 64 DCHP; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent therm...
