BF517

BF 517 NPN Silicon RF Transistor For amplifier and oscillator applications in TV-tuners Type BF 517 Marking Ordering Code LRs Q62702-F42 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 20 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f ≥ 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 340 °C TS ≤ 55 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 0.1 - V nA 50 25 250 V 0.5 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO hFE VCEsat VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA AC Characteristics of any single Transistor Transition frequency fT 1 2 0.55 0.25 1.45 0.8 - GHz pF 0.3 0.75 0.4 dB 2.5 - IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance Cibo - VEB = 0.5 V, IC = ic = 0...