BLP8G10S-270PW
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General descr...
BLP8G10S-270PW
Power LDMOS
transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS packaged symmetric Doherty power
transistor for base station applications at frequencies from 700 MHz to 900 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty application test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
716 to 768
28 47.5 17.3 46 35 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High-efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion ...
