BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS transistor
Rev. 3 — 8 January 2016
Product data sheet
1. Product profile
1.1 ...
BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS
transistor
Rev. 3 — 8 January 2016
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
960
28 2.5
20.8
19.8
49 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation (700 MHz to 1000 MHz) Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardou...
