BLP8G05S-200

BLP8G05S-200; BLP8G05S-200G Power LDMOS transistor Rev. 2 — 1 October 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit. Test signal f VDS PL(AV) (MHz) (V) (W) CW 440 28 210 Gp (dB) 21 D (%) 81 1.2 Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Easy power control  Designed for ISM operation (400 MHz to 500 MHz)  Input integration for simple board design  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 400 MHz to 500 MHz frequency range BLP8G05S-200; BLP8G05S-200G Power LDMOS transistor 2. Pinning information Table...