BLP7G07S-140P
Power LDMOS transistor
Rev. 5 — 8 January 2016
Product data sheet
1. Product profile
1.1 General descri...
BLP7G07S-140P
Power LDMOS
transistor
Rev. 5 — 8 January 2016
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power
transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance
Test signal
f
(MHz)
2-carrier W-CDMA
724 to 769
790 to 821
VDS PL(AV) (V) (W) 28 35 28 35
Gp (dB) 20.9 20.2
D (%) 29.6 29.0
ACPR5M (dBc) 36.3 [1] 35.5 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 100...
