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BLF8G22LS-205V Dataheets PDF



Part Number BLF8G22LS-205V
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF8G22LS-205V DatasheetBLF8G22LS-205V Datasheet (PDF)

BLF8G22LS-205V Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2110 to 2170 .

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BLF8G22LS-205V Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2110 to 2170 1500 28 50 18.3 32.5 32 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for broadband operation  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  In.


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