Document
BLF8G22LS-205V
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2110 to 2170
1500 28 50
18.3 32.5 32 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use In.