BLF8G20LS-230V
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General des...
BLF8G20LS-230V
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
230 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
1800 28 55
18 31.7 29 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched fo...