BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1....
BLF7G24L-100; BLF7G24LS-100
Power LDMOS
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power
transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f
IDq VDS PL(AV) Gp D ACPR885k ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
(dBc)
IS-95
2300 to 2400 900 28 20
18 27 46[1]
-
1 carrier W-CDMA 2300 to 2400 900 28 30
18.7 33 -
40[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability D...
