BLF6G10-200RN; BLF6G10LS-200RN
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
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BLF6G10-200RN; BLF6G10LS-200RN
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 28.5
ACPR (dBc) 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: Average output power = 40 W Power gain = 20 dB Efficiency = 28.5 % ACPR = 39 dBc
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