BLF6G10-200RN; BLF6G10LS-200RN
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
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