BLC10G22LS-240PVT
Power LDMOS transistor
Rev. 2 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descr...
BLC10G22LS-240PVT
Power LDMOS
transistor
Rev. 2 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS power
transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2110 to 2170
1600 28 60
19.7 30
30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness Excellent video bandwidth enabling full band operation High efficiency Low thermal resistance providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protectio...
