DatasheetsPDF.com

BLC9G22LS-160VT

Part Number	BLC9G22LS-160VT
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC9G22LS-160VT Power LDMOS transistor Rev. 2 — 24 May 2017 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet	BLC9G22LS-160VT PDF File

Overview

BLC9G22LS-160VT Power LDMOS transistor Rev.
2 — 24 May 2017 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application.
Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 864 28 35 18.
4 33 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
1.
2 Features and benefits  Excellent ruggedness  Excellent video-bandwidth enabling full band operati...

Similar Datasheet

BLC9G22LS-160VT Power LDMOS transistor - Ampleon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)