BLC9G20LS-470AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General d...
BLC9G20LS-470AVT
Power LDMOS
transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
470 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
28 80
16 49
35 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Asymmetric design to achieve optimum efficiency across the band Lower output capacitance fo...
