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BLC8G24LS-241AV

Part Number	BLC8G24LS-241AV
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC8G24LS-241AV Power LDMOS transistor Rev. 2 — 2 December 2016 Product data sheet 1. Product profile 1.1 General des...
Datasheet	BLC8G24LS-241AV PDF File

Overview

BLC8G24LS-241AV Power LDMOS transistor Rev.
2 — 2 December 2016 Product data sheet 1.
Product profile 1.
1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.
30 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 28 56 15 44 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.
2 dB at 0.
01% probability on CCDF per carrier.
1.
2 Fea...

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BLC8G24LS-241AV Power LDMOS transistor - Ampleon

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