Document
BLS9G2731L-400; BLS9G2731LS-400
LDMOS S-band radar power transistor
Rev. 1 — 13 April 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band applications in the frequency range from 2700 MHz to 3100 MHz.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit measured over the entire 2700 MHz to 3100 MHz frequency range.
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W) (dB)
(%)
pulsed RF
2700 to 3100
32 425 13
47
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band radar applications Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 .