BLS8G2731L-400P; BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 2 — 1 September 2015
Product data sheet
1. ...
BLS8G2731L-400P; BLS8G2731LS-400P
LDMOS S-band radar power
transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power
transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Test signal
f
VDS PL(1dB)
Gp [1] D [1]
PL(2dB)
Gp [2]
D [2]
(GHz)
(V) (W)
(dB) (%)
(W)
(dB) (%)
pulsed RF
2.7 to 2.9 32 540
11 45 610
10 46
2.9 to 3.1 32 490 12 47 550 11 49
2.7 to 3.1 32 530 12 45 590 11 47
[1] at 1 dB gain compression. [2] at 2 dB gain compression.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats ...
