BLS7G2729L-350P; BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 6 — 1 September 2015
Product data sheet
1. ...
BLS7G2729L-350P; BLS7G2729LS-350P
LDMOS S-band radar power
transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power
transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W) (dB) (%) (ns) (ns)
pulsed RF
2.7 to 2.9 32 350 13 50 8
5
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent...