BLP10H6120P

BLP10H6120P; BLP10H6120PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 720 pulsed RF 915 CW 915 VDS PL (V) (W) 50 120 50 160 50 143 Gp (dB) 18 14.9 15.1 D (%) 72 70.2 62.3 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1000 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLP10H6120P; BLP10H6120PG Power LDMOS transistor 2. Pinning information Table ...