BLL8H1214L-500; BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Pr...
BLL8H1214L-500; BLL8H1214LS-500
LDMOS L-band radar power
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power
transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.2 to 1.4
50 500 17
50 20
6
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar a...