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BLL8H1214LS-250 Dataheets PDF



Part Number BLL8H1214LS-250
Manufacturers Ampleon
Logo Ampleon
Description LDMOS L-band radar power transistor
Datasheet BLL8H1214LS-250 DatasheetBLL8H1214LS-250 Datasheet (PDF)

BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.

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