BLA9G1011L(S)-300; BLA9G1011L(S)-300G
Power LDMOS transistor
Rev. 1 — 25 July 2017
Product data sheet
1. Product profi...
BLA9G1011L(S)-300; BLA9G1011L(S)-300G
Power LDMOS
transistor
Rev. 1 — 25 July 2017
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power
transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB demo test circuit.
Test signal
f
VDS
PL
Gp
D tr
tf
(MHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1030
32
317 20.6
63.5 14
5
1060
32
317 21.5
64.8 14
5
1090
32
317 21.8
64.8 14
5
1.2 Features and benefits
Easy power control Integrated dual sided ESD protection enables excellent off-state isolation Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avi...