BLA8G1011L(S)-300; BLA8G1011L(S)-300G
Power LDMOS transistor
Rev. 4 — 4 August 2016
Product data sheet
1. Product prof...
BLA8G1011L(S)-300; BLA8G1011L(S)-300G
Power LDMOS
transistor
Rev. 4 — 4 August 2016
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power
transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W) (dB)
(%)
tr (ns)
pulsed RF
1060
32 300 16.5 56 14
tf (ns) 5
1.2 Features and benefits
Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA8G1011L(S)-300(G)
Power LDMOS
transistor
2. Pinning information
Table 2....
