BLF8G10LS-270V; BLF8G10LS-270GV
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile...
BLF8G10LS-270V; BLF8G10LS-270GV
Power LDMOS
transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
VDS
PL(AV)
Gp
D ACPR5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 67
19.5 31 37[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 10 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (790 MHz to 960 MHz) Lower output capacitance for improved performance in Doherty applications Decoupling leads to enable improved video bandwidth (55 M...